PHOTODIODE DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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app pub date -
Feb 1, 2011
filing date -
May 21, 2010
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Abandoned
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Abstract
A photodiode device and the manufacturing method of the same are provided. The photodiode device includes a substrate; an epitaxy layer on the substrate, the epitaxy layer including a window layer and a cap layer on the window layer, the cap layer covering a portion of the window layer; and a patterned conductive layer on the cap layer, the patterned conductive layer being formed with a bottom area and a top area wherein the bottom area is greater than the top area.
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