LOW-TEMPERATURE POLYSILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME, TRANSISTOR, AND DISPLAY APPARATUS
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United States of America Patent
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Issued Date -
Nov 24, 2011
app pub date -
May 17, 2011
filing date -
May 18, 2010
priority date (Note) -
Abandoned
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Abstract
A method for manufacturing a low-temperature polysilicon thin film comprises the steps of providing a substrate and forming a buffer layer on the substrate; forming a first amorphous silicon thin film on the buffer layer; forming catalyst particles on the first amorphous silicon thin film; forming a second amorphous silicon thin film to cover the first amorphous silicon thin film and the catalyst particles; and performing a crystallization of the first and second amorphous silicon thin films by using the catalyst particles so as to form the low-temperature polysilicon thin film.
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