QUATERNARY VERTICAL LIGHT EMITTING DIODE WITH DOUBLE SURFACE ROUGHENING AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Nov 17, 2011
app pub date -
May 13, 2011
filing date -
May 14, 2010
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Abandoned
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Abstract
The present invention discloses a quaternary vertical light emitting diode with double surface roughening and a manufacturing method thereof, where a Bragg reflective layer is formed on a substrate; a first type of epitaxial layer is formed on the Bragg reflective layer; a light emitting layer is formed on the first type of epitaxial layer; a second type of epitaxial layer is formed on the light emitting layer; a first GaP window layer with small circular holes or in a mesh structure is formed on the second type of epitaxial layer; a second GaP window layer with small circular holes or in a mesh structure is formed on the first GaP window layer; a first electrode is formed on the top surface of the second GaP window layer; and a second electrode is formed on the bottom surface of the GaAs substrate. After conventional processes, the invention forms the alternating small circular holes or the mesh structure between the first GaP window layer and the second GaP window layer to change a light path along which light emitting from the light emitting layer reaches the surface of a light emitting diode die so that more of light emits from inside and the light extracting rate of the invention is 20% higher than that of an existing light emitting diode.
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