DIRECTIONAL SOLID PHASE CRYSTALLIZATION OF THIN AMORPHOUS SILICON FOR SOLAR CELL APPLICATIONS
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United States of America Patent
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Issued Date -
Nov 17, 2011
app pub date -
Jul 15, 2011
filing date -
Jul 22, 2008
priority date (Note) -
Abandoned
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Abstract
Embodiments of the invention provide a system for heat treating a substrate which includes a first processing chamber having a first processing region coupled with a precursor source assembly configured to deliver a silicon containing gas to an upper surface of a substrate disposed within the first processing region in order to form an amorphous silicon film on the upper surface. The system further includes a substrate support having a heating element configured to heat the substrate to a temperature sufficient to crystallize the amorphous silicon film by solid phase crystallization and to create a temperature gradient in which a temperature at the lower surface of the substrate is greater than a temperature at the upper surface of the amorphous silicon film and the temperature gradient is within a range from about 2° C. to about 10° C.
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