Importance

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Abstract

Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form film structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate. In some embodiments, a method of preparing a substrate for silicon carbide epitaxial layer formation can include forming an ultrathin layer of oxide that is configured to inhibit contaminants from interacting with a silicon-based substrate. Further, the method can include forming a carbonized film on the silicon-based substrate that is configured to inhibit contaminants from interacting with the silicon-based substrate. The carbonized film can be configured to be transitory as fabrication parameters are modified to form an epitaxial layer of silicon carbide.

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First Claim