PLASMA PROCESSING APPARATUS AND METHOD FOR THE PLASMA PROCESSING OF SUBSTRATES
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United States of America Patent
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Issued Date -
Nov 10, 2011
app pub date -
Apr 30, 2009
filing date -
May 2, 2008
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Abandoned
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Abstract
A plasma processing apparatus (30, 50) comprises a process chamber with process chamber walls (35), process gas inlet means and process gas distribution means in said process chamber, exhaust means for removal of residual gases and a substrate mount (34) for a substrate (33). In a first embodiment a conductive plate (51) is arranged within said process chamber, electrically connectable with at least one RF power source (39) facing said conductive plate (51), exhibiting a pattern of openings and arranged at a distance to a backside wall (53) of said process chamber so that a process gas delivered to a gap (55) between the conductive plate (51) and said backside wall (53) does not ignite a plasma in the gap (55) during operation. In a second embodiment a first and second electrode are arranged within said process chamber adjacent each other with a gap in-between. The first electrode is connectable to a RF power source and the second electrode is connected to ground. The second electrode exhibits a pattern of openings and is arranged at a distance such that a process gas delivered to said gap does not ignite a plasma during operation.
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