Method for Making Integrated Circuit Device Using Copper Metallization on 1-3 PZT Composite
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United States of America Patent
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Issued Date -
Nov 3, 2011
app pub date -
May 2, 2011
filing date -
Apr 30, 2010
priority date (Note) -
Abandoned
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Abstract
Provided herein is a method of making an integrated circuit device using copper metallization on 1-3 PZT composite. The method includes providing an overlay of electroplated immersion of gold (Au) to cover copper metal traces, the overlay preventing oxidation on 1:3 PZT composite with material. Also included is the formation of immersion Au nickel electrodes on the 1-3 PZT composite to achieve pad metallization for external connections.
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