Semiconductor transistor comprising two electrically conductive shield elements
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United States of America Patent
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Aug 6, 2013
Grant Date -
Nov 3, 2011
app pub date -
Apr 25, 2011
filing date -
Apr 29, 2010
priority date (Note) -
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Abstract
It is disclosed a semiconductor transistor, comprising a semiconductor substrate (111) in which a channel region (115) and a drain extension region (119) connected to the channel region are provided; a gate electrode (127) configured to provide an electric field for influencing the channel region; a first electrically conductive shield element (131) extending in a horizontal direction (103) parallel to a main surface of the semiconductor substrate and being arranged beside the gate electrode spaced apart from the drain extension region in a vertical direction (105) perpendicular to the horizontal direction; and a second electrically conductive shield element (133) arranged spaced apart from the first shield element in the vertical direction, wherein the gate electrode protrudes over the first shield element in the vertical direction.
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