Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials
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United States of America Patent
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Apr 2, 2013
Grant Date -
Nov 3, 2011
app pub date -
Jul 14, 2011
filing date -
Jun 11, 2007
priority date (Note) -
Expired
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Abstract
A method includes forming a first substrate by (a) applying an electrodepositable dielectric coating onto a conductive surface; (b) curing the dielectric coating; (c) depositing an adhesion layer and a seed layer onto the dielectric coating; (d) applying a layer of a first removable material to the seed layer; (e) forming openings in the first removable material to expose areas of the seed layer; (f) electroplating a first conductive material to the exposed areas of the seed layer; (g) applying a layer of a second removable material; (h) forming openings in the second removable material to expose areas of the first conductive material; (i) plating a second conductive material to the exposed areas of the first conductive material; (j) removing the first and second removable materials; (k) removing unplated portions of the seed layer; repeating steps (a) through (k) to form a second substrate; and laminating the first and second substrates together with a layer of dielectric material between the first and second substrates to form at least one interconnect between the first and second substrates.
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