Method of fabricating semiconductor quantum dots
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United States of America Patent
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Issued Date -
Oct 27, 2011
app pub date -
Apr 27, 2010
filing date -
Apr 27, 2010
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Abandoned
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Abstract
The invention relates to a method of fabricating at least one semiconductor quantum dot at a predefined position, comprising the steps of: patterning a semiconductor base material using nanoimprint lithography and an etching step, to form at least one nano-hole at the predefined position in the semiconductor base material; and growing the at least one semiconductor quantum dot in or on top of the at least one nano-hole by metalorganic chemical vapor deposition.
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