GAS BARRIER FILM AND ORGANNIC DEVICE USING THE SAME
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United States of America Patent
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Issued Date -
Oct 27, 2011
app pub date -
Apr 8, 2011
filing date -
Apr 26, 2010
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Abandoned
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Abstract
A SiNx film as a barrier film is provided. The film is formed at a low process temperature, has a high water vapor barrier performance and a high light transmittance, and is useful for sealing of a substrate formed by a flexible organic material, such as a plastic substrate. A barrier film is formed by silicon nitride (SiNx) having an atom ratio [N/(Si+N)] indicating a ratio of nitrogen N to silicon Si in the range of 0.60 to 0.65, by using a surface wave plasma chemical vapor deposition (CVD) device.
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