Hard Carbon Coating and Method of Forming The Same
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United States of America Patent
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Issued Date -
Oct 20, 2011
app pub date -
Apr 11, 2011
filing date -
Apr 14, 2010
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Abandoned
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Abstract
layer has a half-value width of an SiC peak observed at 34° to 36° of diffraction angle when X-ray diffraction (XRD) is carried by using a CuKα ray is 3° or less. A method for forming the coating layer using PVD is carried out under certain temperature and substrate bias conditions.
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