DRY ETCHING METHOD AND DRY ETCHING APPARATUS
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United States of America Patent
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Issued Date -
Oct 13, 2011
app pub date -
Apr 12, 2011
filing date -
Apr 13, 2010
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Abandoned
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Abstract
A dry etching method includes the steps of: supplying process gas to an interior of a vacuum vessel and supplying high-frequency power for plasma generation to an electrode of a plasma generation unit disposed in the vacuum vessel so as to generate plasma; and applying a high-frequency bias voltage to a substrate which is a member to be etched so as to carry out etching of the substrate, wherein the etching is carried out while applying the high-frequency bias voltage in which a self-bias voltage Vdc of a substrate bias voltage is not less than 0 Volts, by adopting a composition using a high-frequency power source for bias which is transformer-coupled to the substrate and a direct current power source for bias which is connected in series to a secondary side of a transformer so as to apply the substrate bias voltage in which a high-frequency voltage and a direct current voltage are superimposed, to the substrate from these power sources via the transformer.
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