Methods of Manufacturing Stacked Semiconductor Devices
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United States of America Patent
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Issued Date -
Sep 29, 2011
app pub date -
Mar 22, 2011
filing date -
Mar 23, 2010
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Abandoned
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Abstract
A stacked semiconductor device that is reliable by forming an insulating layer on a lower memory layer and by forming a single crystalline semiconductor in portions of the insulating layer. A method of manufacturing the stacked semiconductor device, including: providing a lower memory layer including a plurality of lower memory structures; forming an insulating layer on the lower memory layer; forming trenches by removing portions of the insulating layer; forming a preparatory semiconductor layer for filling the trenches; and forming a single crystalline semiconductor layer by phase-changing the preparatory semiconductor layer.
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