Semiconductor device and a method of manufacturing the same
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United States of America Patent
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app pub date -
Jun 9, 2011
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Aug 4, 2003
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Abandoned
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Abstract
type semiconductor region serving as a source region of the trench gate type power MISFET, causing the p-type semiconductor region to serve as a punch-through stopper layer of the trench gate type power MISFET.
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