METHOD OF MANUFACTURING SINGLE CRYSTAL INGOT AND WAFER MANUFACTURED BY THEREBY
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United States of America Patent
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Issued Date -
Sep 22, 2011
app pub date -
Feb 1, 2011
filing date -
Mar 16, 2010
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Abandoned
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Abstract
A method of manufacturing single crystal ingot and a wafer manufactured thereby are provided. The method includes pulling and growing an ingot in a crucible; and cooling the ingot, wherein during the pulling of the ingot, a pulling rate of the ingot is configured to generate a vacancy of less than 80 nm; when the ingot is cooled at an interval of about 1000 to about 2000, a cooling speed of the ingot is slow cooling to allow the vacancy of less than about 80 nm to grow into a vacancy of more than about 80 nm.
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