METHOD FOR PHASE TRANSITION OF AMORPHOUS MATERIAL
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United States of America Patent
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Issued Date -
Sep 15, 2011
app pub date -
May 19, 2009
filing date -
Sep 9, 2008
priority date (Note) -
Abandoned
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Abstract
Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.
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