Reliability Protection for Non-Volatile Memories
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United States of America Patent
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Issued Date -
Sep 8, 2011
app pub date -
Mar 4, 2010
filing date -
Mar 4, 2010
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Abstract
A non-volatile memory cell having enhanced protection against mobile ions. The electric field within the memory cell is controlled in a manner that minimizes migration of mobile ions toward the floating gate. Each conductive layer in the memory cell is biased to reduce the flow of mobile ions toward the floating gate. The memory cell is preferably manufactured using a conventional logic process.
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