SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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app pub date -
Aug 14, 2008
filing date -
Aug 16, 2007
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Abstract
In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost.film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.
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