Ferroelectric passive memory cell, device and method of manufacture thereof
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United States of America Patent
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Mar 4, 2011
filing date -
Dec 20, 2005
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Abstract
A first passive ferroelectric memory element comprising a first electrode system and a second electrode system, wherein said first electrode system is at least partly insulated from said second electrode system by an element system comprising at least one ferroelectric element, wherein said first electrode system is a conductive surface, or a conductive layer; wherein said second electrode system is an electrode pattern or a plurality of isolated conductive areas in contact with, for read-out or data-input purposes only, a plurality of conducting pins isolated from one another.
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