HIGH DENSITY AND LOW VARIABILITY READ ONLY MEMORY
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United States of America Patent
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Issued Date -
Sep 1, 2011
app pub date -
Feb 28, 2010
filing date -
Feb 28, 2010
priority date (Note) -
Abandoned
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Abstract
A read-only memory for storing two data values using a single transistor includes a word line, a pair of bit lines, a select line, and a transistor to store data corresponding to each bit lines in the pair of bit lines. The gate terminal of the transistor is connected to the word line, a first diffusion terminal of the transistor is connected to one of the first bit line and the select line based on the first data value and a second diffusion terminal of the transistor is connected to one of the second bit line and the select line based on the second data value.
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