SEMICONDUCTOR DEVICE HAVING BUCKET-SHAPED UNDER-BUMP METALLIZATION AND METHOD OF FORMING SAME
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United States of America Patent
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Issued Date -
Sep 1, 2011
app pub date -
Feb 26, 2010
filing date -
Feb 26, 2010
priority date (Note) -
Abandoned
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Abstract
An embodiment of a method of forming a semiconductor device that includes a substrate having an active layer and interconnect formed on the active layer is described. The method includes: forming a dielectric layer above the interconnect having a tapered via exposing at least a portion of a first metal layer; forming an under-bump metallization (UBM) layer over the tapered via and the first metal layer to form a UBM bucket; and forming a dielectric cap layer over the dielectric layer and a portion of the UBM layer. The UBM bucket is configured to support a solder ball and can advantageously block all alpha particles emitted by the solder ball having a relevant angle of incidence from reaching the active semiconductor regions of the IC. Thus, soft errors, such as single event upsets in memory cells, are reduced or eliminated.
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