GAS INJECTION SYSTEM FOR ETCHING PROFILE CONTROL
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United States of America Patent
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Issued Date -
Aug 25, 2011
app pub date -
Feb 23, 2011
filing date -
Feb 23, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A gas injection system provided in a plasma etching equipment is provided. The system includes a top gas injector for supplying a reaction gas at a top of a chamber, and a side gas injector for supplying a tuning gas from a side surface of the chamber or a backside gas injector upward jetting a tuning gas from a lower side of a wafer. The side gas injector or backside gas injector forms a plurality of jets in a radial shape and simultaneously installs the jets adjacently to an edge part of a wafer such that a tuning gas is jetted adjacently to the edge part of the wafer, thereby being capable of easily controlling a an etch rate or CD uniformity or profile of the edge part.
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