Non-Volatile Memory Device Including Quantum Dots Embeded in Oxide Thin Film, and Fabrication Method of the Same
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United States of America Patent
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Issued Date -
Aug 18, 2011
app pub date -
Feb 23, 2010
filing date -
Feb 17, 2010
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Abandoned
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Abstract
A non-volatile memory device is provided in which quantum dots are embedded in an oxide thin film formed on a substrate. A conventional Si CMOS process can be used to manufacture the non-volatile memory device in a cost-effective way. Also, a photonic device and an electronic/photonic device, which can store a light signal or emit a stored signal as light, can be produced on a Si wafer in a cost-effective manner.
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