CMOS IMAGE SENSOR

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United States of America Patent

APP PUB NO 20110194007A1
SERIAL NO

12781739

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Abstract

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Disclosed herein is a Complementary Metal-Oxide Semiconductor (CMOS) image sensor. The CMOS image sensor includes a pixel array, a frame memory, and an analog-to-digital converter. The pixel array includes N unit pixels for converting optical signals, caused by light, into electric signals. The frame memory eliminates offset voltage included in reset voltage and signal voltage transmitted from the pixel array and internal offset voltage, and performs Correlated Double Sampling (CDS) on the reset voltage and the signal voltage. The analog-to-digital converter converts an analog signal, transmitted from the frame memory, into a digital signal.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRO-MECHANICS CO LTDSUWON-SI GYEONGGI-DO 16674
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION SOGANG UNIVERSITYSEOUL SOUTH KEREAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Burm, Jinwook Gyunggi-do, KR 11 128
Choi, Won Tae Gyunggi-do, KR 63 491
KIM, Byung Hoon Gyunggi-do, KR 52 398

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