High Injection Efficiency Polar and Non-Polar III-Nitrides Light Emitters
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 4, 2011
app pub date -
Jan 26, 2011
filing date -
Feb 4, 2010
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Injection efficiency in both polar and non-polar III-nitride light-emitting structures is strongly deteriorated by inhomogeneous population of different quantum wells (QWs) in multiple QW (MQW) active region of the emitter. Inhomogeneous QW population becomes stronger in long-wavelength emitters with deeper active QWs. In both polar and non-polar structures, indium and/or aluminum incorporation into optical waveguide layers and/or barrier layers of the active region, depending on the desired wavelength of the light to be emitted, improves the uniformity of QW population and increases the structure injection efficiency.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully