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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
SLT TECHNOLOGIES INC	C/O LOEB & LOEB 10100 SANTA MONICA BLVD SUITE 2200 LOS ANGELES CA 90067

International Classification(s)

• B01J:CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS, CO....
• C30B:SINGLE-CRYSTAL GROWTH

• [Classification Symbol]

• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
D'Evelyn, Mark P	Goleta, US	113	5838

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Apr 28, 2026

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
October 28, 2014	US,8871024,B2   US8871024B2	GRANTED PATENT AS SECOND PUBLICATION
July 28, 2011	US,20110183498,A1   US20110183498A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent Application No: 2011/0183,498

High Pressure Apparatus and Method for Nitride Crystal Growth

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