Importance

Loading Importance Indicators...

Abstract

The invention is intended to specify an electrical measuring method for an operating temperature and a modified component for carrying out the method which improves the monitoring of the component. Measured temperature values are intended to be delivered without any time delay and without requiring additional surfaces for temperature sensors. Location-related temperature values need to be able to be measured. The invention proposes a method for said location-related electrical measurement of the operating temperature of a likewise proposed MOS power component with a gate electrode network comprising a material whose temperature coefficient of the electrical resistance is known. The gate electrode network is divided into a plurality of measuring sections with contact point pairs which are respectively connected to contacts (71.1, 72.1; 71.2, 72.2; 71.3, 7; 72.3, 7). The contact points in each contact point pair are at a certain distance from one another, and each of the measuring sections situated between the contact point pairs is respectively electrically insulated from the other measuring sections, so that there is no electrical influencing between the measuring sections. The electrical resistances of the measuring sections are measured directly on the gate electrode network during the operation of the semiconductor power component when gate voltages are applied between the contact points of the gate electrode (4) using measuring voltages (u.sub.1, u.sub.2, u.sub.3) superimposed on the gate voltages. The electrical resistances of the measuring sections are used to determine the temperatures of the MOS semiconductor power component on the measuring sections.

Loading the Abstract Image...

First Claim