METHOD OF MANUFACTURING A CMOS IMAGE SENSOR

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United States of America Patent

APP PUB NO 20110180895A1
SERIAL NO

12996873

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Disclosed is a method of manufacturing a CMOS image sensor, capable of preventing hillock-type defects caused by the delamination of interconnections from occurring in the CMOS image sensor. The method of manufacturing the CMOS image sensor includes preparing a substrate having a first metal interconnection, forming an interlayer insulation layer over the first metal interconnection, forming a contact hole to expose a part of the first metal interconnection by etching the interlayer insulation layer, forming a buffer layer on the interlayer insulation layer along an inner surface of the contact hole, performing an annealing process, forming a spacer on an inner sidewall of the contact hole by etching the buffer layer, forming a barrier metal layer along a top surface of the interlayer insulation layer including the spacer, forming a contact plug on the barrier metal layer such that the contact hole is filled with the contact plug, and forming a second metal interconnection on the interlayer insulation layer such that the second metal interconnection makes contact with the contact plug.

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Patent Owner(s)

Patent OwnerAddress
INTELLECTUAL VENTURES II LLC251 LITTLE FALLS DRIVE WILMINGTON DE 19808

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Pyo, Sung-Gyu Seoul, KR 9 151

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