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Abstract

A photovoltaic cell comprises an electrode layer (1.sub.b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7.sub.b). There follows a contact layer (11.sub.b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11.sub.b). Subsequently to the first type doped amorphous silicon compound layer (2.sub.b) there follows a layer of intrinsic type silicon compound (3.sub.b) and a layer of second type doped silicon compound (5.sub.b).

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