SEMICONDUCTOR LIGHT EMITTING DEVICE WITH CURVATURE CONTROL LAYER
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United States of America Patent
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Issued Date -
Jul 21, 2011
app pub date -
Jan 15, 2010
filing date -
Jan 15, 2010
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Abandoned
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Abstract
A semiconductor structure is grown on a top surface of a growth substrate. The semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. A curvature control layer is disposed in direct contact with the growth substrate. The growth substrate has a thermal expansion coefficient less than a thermal expansion coefficient of GaN and the curvature control layer has a thermal expansion coefficient greater than the thermal expansion coefficient of GaN.
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