Metal Oxide Resistance Based Semiconductor Memory Device With High Work Function Electrode
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jul 21, 2011
app pub date -
Sep 9, 2010
filing date -
Jan 19, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Various aspect are directed to a memory device or memory cell with a metal-oxide memory element arranged in electrical series along a current path between at least a first electrode, a metal-oxide memory element adjacent to the first electrode, and a second electrode. The first electrode comprises an electrode material having a first work function. The metal-oxide memory element comprises a metal-oxide material having a second work function. The first work function is greater than the second work function. Thermionic emission characterizes the current through this memory.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully