HETEROJUNCTION SOLAR CELL WITH ABSORBER HAVING AN INTEGRATED DOPING PROFILE
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United States of America Patent
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Issued Date -
Jul 21, 2011
app pub date -
Jun 30, 2009
filing date -
Jul 1, 2008
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Abandoned
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Abstract
The invention relates to a heterojunction solar cell and a method for the production thereof. The heterojunction solar cell has an absorber layer made of silicon with a basic doping and at least one heterojunction layer of a doped semiconductor material whose band gap differs from that of the silicon of the absorber layer. The absorber layer has a doped layer at an interface directed toward the heterojunction layer, the doping concentration of said doped layer being greater than the basic doping concentration of the absorber layer. As a result of this doping profile, a field effect can be caused which prevents charge carrier pairs produced within the absorber layer from diffusing toward the interface between the absorber layer and the heterojunction layer and from recombining there.
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