METHOD FOR LIMITING EPITAXIAL GROWTH IN A PHOTOELECTRIC DEVICE WITH HETEROJUNCTIONS AND PHOTOELECTRIC DEVICE

United States of America Patent

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Issued Date
Jul 21, 2011
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Aug 31, 2009
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Sep 1, 2008

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Abstract

A method for limiting epitaxial growth in a photoelectric device with heterojunctions including a crystalline silicon substrate and at least one layer of amorphous or microcrystalline silicon, wherein the method is characterised in that it includes the step of texturing the crystalline silicon surface.

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Patent Owner	Address
UNIVERSITE DE NEUCHATEL	FAUBOURG DU LAC 5A NEUCHATEL CH-2000

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H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....

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Inventor Name	Address	# of filed Patents	Total Citations
Ballif, Christophe	Neuchatel, CH	17	142
Damon-Lacoste, Jérôme	Antony, FR	3	5
Monachon, Christian	Rivaz, CH	4	7
Olibet, Sara	Winterthur, CH	1	4

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METHOD FOR LIMITING EPITAXIAL GROWTH IN A PHOTOELECTRIC DEVICE WITH HETEROJUNCTIONS AND PHOTOELECTRIC DEVICE

Number of patents in Portfolio can not be more than 2000

United States of America Patent

13061584

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13061584

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