FERROMAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD OF DRIVING FERROMAGNETIC TUNNEL JUNCTION ELEMENT

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United States of America Patent

SERIAL NO

12673935

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Abstract

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In a tunnel junction element having a ferromagnetic free layer, an insulating layer and a ferromagnetic fixed layer, in order to reduce the current necessary for spin-transfer magnetization reversal operation in the tunnel junction element, the ferromagnetic free layer comprises first and second ferromagnetic layers, a nonmagnetic metal layer is provided between these ferromagnetic layers, the nonmagnetic metal layer is such that magnetic coupling is preserved between the first and second ferromagnetic layers, also such that there is no influence on the crystal growth of the first and second ferromagnetic layers, the first ferromagnetic layer and the second ferromagnetic layer are placed such that the first ferromagnetic layer is in contact with the insulating layer, and the second ferromagnetic layer has a smaller magnetization than the first ferromagnetic layer.

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Patent Owner(s)

Patent OwnerAddress
III HOLDINGS 3 LLC2711 CENTERVILLE ROAD SUITE 400 WILMINGTON DE 19808

International Classification(s)

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  • 2008 Application Filing Year
  • H01L Class
  • 14823 Applications Filed
  • 10962 Patents Issued To-Date
  • 73.96 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances200820092010201120122013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ono, Takuya Tsukama, JP 52 83

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  • 5 Citation Count
  • H01L Class
  • 3.01 % this patent is cited more than
  • 14 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1702407123365539219115410570614515901 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0200400600800100012001400160018002000220024002600

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