Method for Sealing Pores at Surface of Dielectric Layer by UV Light-Assisted CVD
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United States of America Patent
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Issued Date -
Jun 30, 2011
app pub date -
Nov 24, 2010
filing date -
Dec 29, 2009
priority date (Note) -
Abandoned
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Abstract
A method for sealing pores at a surface of a dielectric layer formed on a substrate, includes: providing a substrate on which a dielectric layer having a porous surface is formed as an outermost layer; placing the substrate in an evacuatable chamber; irradiating the substrate with UV light in an atmosphere of hydrocarbon and/or oxy-hydrocarbon gas; sealing pores at the porous surface of the dielectric layer as a result of the irradiation; and continuously irradiating the substrate with UV light in the atmosphere of hydrocarbon and/or oxy-hydrocarbon gas until a protective film having a desired thickness is formed on the dielectric layer as a result of the irradiation.
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