Semiconductor memory device using variable resistance element or phase-change element as memory device
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United States of America Patent
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Mar 26, 2013
Grant Date -
Jun 23, 2011
app pub date -
Aug 30, 2010
filing date -
Dec 17, 2009
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Abstract
A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a rectifier element connected in series with each other between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The double-sidewall film includes a silicon oxide film and the silicon nitride film formed on a side surface of the rectifier element.
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