METHODS OF FORMING A SHALLOW BASE REGION OF A BIPOLAR TRANSISTOR
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United States of America Patent
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app pub date -
Feb 15, 2011
filing date -
Apr 2, 2008
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Abstract
The disclosed subject matter provides a method of forming a bipolar transistor. The method includes depositing a first insulating layer over a first layer of material that is doped with a dopant of a first type. The first layer is formed over a substrate. The method also includes modifying a thickness of the first oxide layer based on a target dopant profile and implanting a dopant of the first type in the first layer. The dopant is implanted at an energy selected based on the modified thickness of the first insulating layer and the target dopant profile.
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