NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jun 16, 2011
app pub date -
Dec 11, 2009
filing date -
Dec 11, 2009
priority date (Note) -
Abandoned
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Abstract
A non-volatile memory device including a substrate, a dielectric layer, a floating gate, source and drain regions, a channel region, and a doped layer is provided. The substrate includes a first region and a second region, and the substrate has an uneven surface in the second region. The dielectric layer is located on the substrate in the first region and in the second region to cover the uneven surface. The floating gate is located on the dielectric layer in the first region and is continuously extended to the second region. The source and drain regions are located in the substrate at opposite sides of the floating gate in the first region. The channel region is located in the substrate between the source and drain regions. The doped layer is located on the uneven surface or in the substrate in the second region to serve as a control gate.
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