SPUTTERING TARGET WITH AN INSULATING RING AND A GAP BETWEEN THE RING AND THE TARGET

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United States of America Patent

SERIAL NO

13031459

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A sputtering plasma reactors for plasma vapor deposition (PVD) having an improved interface between a PVD target, a ceramic ring and a PVD chamber wall. The reactor includes a PVD chamber wall and a PVD target, wherein the target in conjunction with the PVD chamber wall form a vacuum chamber and wherein at least the portion of the target facing the vacuum chamber is composed of material to be sputtered. The reactor also includes an insulating ceramic ring positioned between the target and the PVD chamber wall. A first O-ring is provided to establish a vacuum seal between the target and the insulating ring and a second O-ring is provided to establish a vacuum seal between the insulating ring and the PVD chamber wall. At least one spacer is positioned between the target and insulating ring to maintain a gap G between the insulating ring and the target. The spacer is made of a suitable low coefficient of friction material and inhibits black marking, scratching or the like that may otherwise occur along the interface between the ceramic ring and the target.

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Patent Owner(s)

Patent OwnerAddress
TOSOH SMD INCGROVE CITY OH

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Conard, Harry W Orient, US 6 157
Ivanov, Eugene Y Grove City, US 46 502
Poole, John E Grove City, US 9 71
Theado, Erich Grove City, US 8 22

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