PROCESS FOR PRODUCING SILICON CARBIDE
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United States of America Patent
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Issued Date -
Jun 9, 2011
app pub date -
May 18, 2009
filing date -
May 21, 2008
priority date (Note) -
Abandoned
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Abstract
A process for producing porous silicon carbide comprising mixing particles of silicon carbide reactant with particles of carbon, and calcining the mixture in an atmosphere comprising molecular oxygen at a temperature in excess of 950° C., wherein the silicon carbide:carbon mass ratio in the mixture is in the range of from 5:1 to 1:10.
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