Resistive memory device and method of fabricating the same
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United States of America Patent
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Jan 1, 2013
Grant Date -
Jun 9, 2011
app pub date -
May 4, 2010
filing date -
Dec 4, 2009
priority date (Note) -
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Abstract
Provided are resistive memory devices and methods of fabricating the same. The resistive memory devices and the methods are advantageous for high integration because they can provide a multilayer memory cell structure. Also, the parallel conductive lines of adjacent layers do not overlap each other in the vertical direction, thus reducing errors in program/erase operations.
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