METHOD AND APPARATUS FOR SURFACE TREATMENT USING A MIXTURE OF ACID AND OXIDIZING GAS
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United States of America Patent
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Issued Date -
Jun 2, 2011
app pub date -
Nov 30, 2009
filing date -
Nov 30, 2009
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Abandoned
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Abstract
Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by combining gaseous ozone and heated sulfuric acid such that a gas/liquid dispersion or foam of ozone in sulfuric acid is applied in a layer to the wafer surface to be treated.
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