Programmable Resistance Memory

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United States of America Patent

APP PUB NO 20110128766A1
SERIAL NO

12626988

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Abstract

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A nonvolatile integrated circuit memory includes mode control circuitry that allows it to be configured as any of a plurality of memory types.

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Patent OwnerAddress
OVONYX MEMORY TECHNOLOGY LLC1940 DUKE STREET SUITE 200 ALEXANDRIA VA 22314

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Parkinson, Ward Boise, US 84 1408

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