ION IMPLANTATION TO CHANGE THE OPTICAL PROPERTIES OF THE PASSIVATION FILMS IN CMOS IMAGER DEVICES
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United States of America Patent
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Issued Date -
Jun 2, 2011
app pub date -
Nov 30, 2009
filing date -
Nov 30, 2009
priority date (Note) -
Abandoned
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Abstract
Imager sensor pixels, image sensor and methods for forming image sensors. An image sensor pixel includes a photosensor, a microlens that receives incident light, at least one fabrication layer between the photosensor and the microlens and a passivation layer between the microlens and the at least one fabrication layer. The passivation layer includes a plurality of impurities and passes the incident light from the microlens to the photosensor without substantially redirecting the incident light.
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