Resistance change memory and manufacturing method thereof
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United States of America Patent
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Oct 1, 2013
Grant Date -
Jun 2, 2011
app pub date -
Jul 27, 2010
filing date -
Nov 30, 2009
priority date (Note) -
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Abstract
According to one embodiment, a resistance-change memory of embodiment includes a first interconnect line extending in a first direction, a second interconnect line extending in a second direction intersecting with the first direction, and a cell unit. The cell unit is provided at an intersection of the first interconnect line and the second interconnect line. The cell unit includes a non-ohmic element having a silicide layer on at least one of first and second ends thereof, and a memory element to store data in accordance with a reversible change in a resistance state. The silicide layer includes a 3d transition metal element which combines with an Si element to form silicide and which has a first atomic radius, and at least one kind of an additional element having a second atomic radius greater than the first atomic radius.
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