INTERLAYER INSULATING FILM, WIRING STRUCTURE, AND METHODS OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jun 2, 2011
app pub date -
Aug 14, 2008
filing date -
Aug 16, 2007
priority date (Note) -
Abandoned
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Abstract
(where n=1 to 3, x≦1) is used to form an interlayer insulation film. The insulative coat film applied by spin-coating is flat without reflecting underlying unevenness, and the heat-treated film has surface roughness of 1 nm or less in Ra and 20 nm or less in a P-V value. The interlayer insulation film containing the insulative coat film can have a wiring structure and an electrode formed only by etching without need of a CMP process.
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