SEMICONDUCTOR DEVICE AND DC-DC CONVERTER
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United States of America Patent
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Issued Date -
May 26, 2011
app pub date -
Sep 17, 2010
filing date -
Nov 26, 2009
priority date (Note) -
Abandoned
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Abstract
According to one embodiment, a semiconductor device includes a base layer of a second conductivity type, a device isolation layer, a control electrode, a high dielectric layer, a first main electrode, and a second main electrode. The base layer includes a source region of a first conductivity type and a drain region of the first conductivity type. The source region and the drain region are selectively formed on a surface of the base layer. The device isolation layer is provided in the base layer to be extended in a direction from the source region to the drain region. The control electrode is provided on a top side of the device isolation layer to control a current passage between the source region and the drain region. The high dielectric layer is arranged in at least a part on a top side of the base layer or in at least a part in the device isolation layer. The high dielectric layer has a higher dielectric constant than a dielectric constant of the device isolation layer. The first main electrode is connected to the source region. The second main electrode is connected to the drain region.
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