LDMOS having a field plate
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United States of America Patent
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May 28, 2013
Grant Date -
May 26, 2011
app pub date -
Jul 20, 2009
filing date -
Jul 22, 2008
priority date (Note) -
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Abstract
Laterally diffused metal oxide semiconductor transistor for a radio frequency-power: amplifier comprising a drain finger (25,27) which drain finger is connected to a stack of one or more metal interconnect layers, (123,61,59,125) wherein a metal interconnect layer (123) of said stack is connected to a drain region (25) on the substrate, wherein said stack comprises a field plate (123, 125, 121) adapted to reduce the maximum magnitude of the electric field between the drain and the substrate and overlying the tip of said drain finger.
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