METHOD OF PRODUCING A SEMICONDUCTOR DEVICE WITH AN ALUMINUM OR ALUMINUM ALLOY ELECTRODE
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United States of America Patent
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app pub date -
Dec 17, 2010
filing date -
Jun 20, 2005
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Abstract
A semiconductor device includes a silicon substrate having a first major surface and a second major surface opposite to the first major surface, a drift layer and a collector layer formed in sequence in the silicon substrate from the first major surface, and an aluminum silicon film formed on the second major surface. The drift layer is of a first conductivity type, and is surrounded by a semiconductor layer of a second conductivity type including the collector layer.
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